IRF540NPbF mosfet equivalent, power mosfet.
round Plane
* Low Leakage Inductance Current Transformer
-
- -+
VGS
RG
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D"
* D.U.T. - Device .
G
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
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